PK8A6EA Datasheet and Replacement
Type Designator: PK8A6EA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 446 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm
Package: PDFN5X6P
PK8A6EA substitution
PK8A6EA Datasheet (PDF)
pk8a6ea.pdf

N-Channel Enhancement Mode PK8A6EA NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 5.1m 70A ESD Protected Gate Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.
Datasheet: PK626HY , PK676BA , PK6A8BA , PK6B0SA , PK6M6DX , PK844DS , PK884DS , PK892DS , AO4407 , PK8B0BA , PK8C2BA , PK8D8BA , PKC46DY , PKCD0BB , PKCE9BB , PKCH6BB , PKCK2BB .
History: VP0104 | STD12N50M2 | NCE3080I | DH100P30AE | IRFS9N60A | SIA975DJ | AM7306NA
Keywords - PK8A6EA MOSFET datasheet
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History: VP0104 | STD12N50M2 | NCE3080I | DH100P30AE | IRFS9N60A | SIA975DJ | AM7306NA



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