PK8D8BA Datasheet and Replacement
Type Designator: PK8D8BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 246 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: PDFN5X6P
PK8D8BA substitution
PK8D8BA Datasheet (PDF)
pk8d8ba.pdf

N-Channel Enhancement Mode PK8D8BA NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D30V 4.5m 70A GFeatures S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. D D D D Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G.
Datasheet: PK6B0SA , PK6M6DX , PK844DS , PK884DS , PK892DS , PK8A6EA , PK8B0BA , PK8C2BA , 2N7002 , PKC46DY , PKCD0BB , PKCE9BB , PKCH6BB , PKCK2BB , PKCP4EB , PKCR0BB , PKCS0BB .
History: STB21NM60N | CS9N65F | IPS60R280PFD7S | FDP8441F085 | HY3503C2 | OSG70R500DF | HY3606P
Keywords - PK8D8BA MOSFET datasheet
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History: STB21NM60N | CS9N65F | IPS60R280PFD7S | FDP8441F085 | HY3503C2 | OSG70R500DF | HY3606P



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