PK8D8BA Specs and Replacement
Type Designator: PK8D8BA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 246 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: PDFN5X6P
PK8D8BA substitution
- MOSFET ⓘ Cross-Reference Search
PK8D8BA datasheet
pk8d8ba.pdf
N-Channel Enhancement Mode PK8D8BA NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 30V 4.5m 70A G Features S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. D D D D Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G. ... See More ⇒
Detailed specifications: PK6B0SA, PK6M6DX, PK844DS, PK884DS, PK892DS, PK8A6EA, PK8B0BA, PK8C2BA, AON7506, PKC46DY, PKCD0BB, PKCE9BB, PKCH6BB, PKCK2BB, PKCP4EB, PKCR0BB, PKCS0BB
Keywords - PK8D8BA MOSFET specs
PK8D8BA cross reference
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