PKCE9BB Datasheet and Replacement
Type Designator: PKCE9BB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 62 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 92 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 94 nS
Cossⓘ - Output Capacitance: 798 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00395 Ohm
Package: PDFN5X6P
PKCE9BB substitution
PKCE9BB Datasheet (PDF)
pkce9bb.pdf

P-Channel Logic Level Enhancement Mode PKCE9BB NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D-40V 3.95m -92A GFeatures S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. D D D D Optimized Gate Charge to Minimize Switchin
Datasheet: PK884DS , PK892DS , PK8A6EA , PK8B0BA , PK8C2BA , PK8D8BA , PKC46DY , PKCD0BB , 13N50 , PKCH6BB , PKCK2BB , PKCP4EB , PKCR0BB , PKCS0BB , PKE02BB , PKE30BB , PKE94BB .
History: SQ3469EV | 12N70KL-TF2-T | AOTF2910L | HS54095 | BRCS080N10SHZC | BRCS080N10SHDP | FQI5N20TU
Keywords - PKCE9BB MOSFET datasheet
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History: SQ3469EV | 12N70KL-TF2-T | AOTF2910L | HS54095 | BRCS080N10SHZC | BRCS080N10SHDP | FQI5N20TU



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