PKCP4EB Datasheet and Replacement
Type Designator: PKCP4EB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 240 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 114 nS
Cossⓘ - Output Capacitance: 1164 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
Package: PDFN5X6P
PKCP4EB substitution
PKCP4EB Datasheet (PDF)
pkcp4eb.pdf

N-Channel Enhancement Mode PKCP4EB NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 24V 0.85m 240A Features Pb-Free, Halogen Free and RoHS compliant. ESD Protected Gate Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses
Datasheet: PK8B0BA , PK8C2BA , PK8D8BA , PKC46DY , PKCD0BB , PKCE9BB , PKCH6BB , PKCK2BB , 2SK3568 , PKCR0BB , PKCS0BB , PKE02BB , PKE30BB , PKE94BB , PKE96BB , PKEA6EB , PM515BA .
History: AP9932GM | IPS80R750P7
Keywords - PKCP4EB MOSFET datasheet
PKCP4EB cross reference
PKCP4EB equivalent finder
PKCP4EB lookup
PKCP4EB substitution
PKCP4EB replacement
History: AP9932GM | IPS80R750P7



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