PKEA6EB Specs and Replacement

Type Designator: PKEA6EB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 79 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66 nS

Cossⓘ - Output Capacitance: 557 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm

Package: PDFN5X6P

PKEA6EB substitution

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PKEA6EB datasheet

 ..1. Size:441K  niko-sem
 pkea6eb.pdf pdf_icon

PKEA6EB

N-Channel Enhancement Mode PKEA6EB NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 4.1m 79A ESD Protected Gate Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ... See More ⇒

Detailed specifications: PKCK2BB, PKCP4EB, PKCR0BB, PKCS0BB, PKE02BB, PKE30BB, PKE94BB, PKE96BB, SI2302, PM515BA, PM555BZ, PM567EA, PM569BA, PM5C3BA, PM5D8EA, PM5H7EA, PM5Q2EA

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