PKEA6EB Datasheet and Replacement
Type Designator: PKEA6EB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 79 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 557 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
Package: PDFN5X6P
PKEA6EB substitution
PKEA6EB Datasheet (PDF)
pkea6eb.pdf
N-Channel Enhancement Mode PKEA6EB NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 4.1m 79A ESD Protected Gate Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.
Datasheet: PKCK2BB , PKCP4EB , PKCR0BB , PKCS0BB , PKE02BB , PKE30BB , PKE94BB , PKE96BB , SI2302 , PM515BA , PM555BZ , PM567EA , PM569BA , PM5C3BA , PM5D8EA , PM5H7EA , PM5Q2EA .
History: UT3P01Z
Keywords - PKEA6EB MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: UT3P01Z
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