All MOSFET. PM555BZ Datasheet

 

PM555BZ Datasheet and Replacement


   Type Designator: PM555BZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SOT-23
 

 PM555BZ substitution

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PM555BZ Datasheet (PDF)

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PM555BZ

P-Channel Enhancement Mode PM555BZ NIKO-SEM SOT-23 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID -30V 29m -5A GSFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applications

Datasheet: PKCR0BB , PKCS0BB , PKE02BB , PKE30BB , PKE94BB , PKE96BB , PKEA6EB , PM515BA , 18N50 , PM567EA , PM569BA , PM5C3BA , PM5D8EA , PM5H7EA , PM5Q2EA , PM5Q4BA , PM5T4EA .

History: IPL65R1K0C6S | MFT60N12T22FS

Keywords - PM555BZ MOSFET datasheet

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