All MOSFET. PM555BZ Datasheet

 

PM555BZ Datasheet and Replacement


   Type Designator: PM555BZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SOT-23
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PM555BZ Datasheet (PDF)

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PM555BZ

P-Channel Enhancement Mode PM555BZ NIKO-SEM SOT-23 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID -30V 29m -5A GSFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applications

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BUK7614-30 | SWD10N70K | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

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