PM555BZ Specs and Replacement

Type Designator: PM555BZ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 124 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: SOT-23

PM555BZ substitution

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PM555BZ datasheet

 ..1. Size:341K  niko-sem
 pm555bz.pdf pdf_icon

PM555BZ

P-Channel Enhancement Mode PM555BZ NIKO-SEM SOT-23 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -30V 29m -5A G S Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applications ... See More ⇒

Detailed specifications: PKCR0BB, PKCS0BB, PKE02BB, PKE30BB, PKE94BB, PKE96BB, PKEA6EB, PM515BA, 18N50, PM567EA, PM569BA, PM5C3BA, PM5D8EA, PM5H7EA, PM5Q2EA, PM5Q4BA, PM5T4EA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.