All MOSFET. PM567EA Datasheet

 

PM567EA Datasheet and Replacement


   Type Designator: PM567EA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 0.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: SOT-23
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PM567EA Datasheet (PDF)

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PM567EA

P-Channel Enhancement Mode PM567EA NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 520m -0.8A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD Protecti

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PSMN018-100PSF | BUZ84 | IRLR024 | AON6794 | CMP40P03 | CED05N8 | BL10N70-A

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