PM567EA Datasheet and Replacement
Type Designator: PM567EA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 18 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: SOT-23
PM567EA substitution
PM567EA Datasheet (PDF)
pm567ea.pdf

P-Channel Enhancement Mode PM567EA NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 520m -0.8A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD Protecti
Datasheet: PKCS0BB , PKE02BB , PKE30BB , PKE94BB , PKE96BB , PKEA6EB , PM515BA , PM555BZ , IRF530 , PM569BA , PM5C3BA , PM5D8EA , PM5H7EA , PM5Q2EA , PM5Q4BA , PM5T4EA , PM5W6EA .
History: SVS11N70DD2TR | BRCS120N03YA | STB27NM60ND | IPG20N10S4L-22 | IPB042N03LG | IPS80R2K4P7 | IRFD224PBF
Keywords - PM567EA MOSFET datasheet
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History: SVS11N70DD2TR | BRCS120N03YA | STB27NM60ND | IPG20N10S4L-22 | IPB042N03LG | IPS80R2K4P7 | IRFD224PBF



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