PM567EA Specs and Replacement
Type Designator: PM567EA
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: SOT-23
PM567EA substitution
- MOSFET ⓘ Cross-Reference Search
PM567EA datasheet
pm567ea.pdf
P-Channel Enhancement Mode PM567EA NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 520m -0.8A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD Protecti... See More ⇒
Detailed specifications: PKCS0BB, PKE02BB, PKE30BB, PKE94BB, PKE96BB, PKEA6EB, PM515BA, PM555BZ, 20N50, PM569BA, PM5C3BA, PM5D8EA, PM5H7EA, PM5Q2EA, PM5Q4BA, PM5T4EA, PM5W6EA
Keywords - PM567EA MOSFET specs
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