PM5T4EA Specs and Replacement
Type Designator: PM5T4EA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 49 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOT-23
PM5T4EA substitution
- MOSFET ⓘ Cross-Reference Search
PM5T4EA datasheet
pm5t4ea.pdf
N-Channel Enhancement Mode Field PM5T4EA NIKO-SEM Effect Transistor SOT-23(S) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 35m 4.3A ESD Protected Gate Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ... See More ⇒
Detailed specifications: PM555BZ, PM567EA, PM569BA, PM5C3BA, PM5D8EA, PM5H7EA, PM5Q2EA, PM5Q4BA, P60NF06, PM5W6EA, PP1410AD, PP1410AEA, PP1410AF, PP1410AK, PP1515AD, PP1515AF, PP1515AK
Keywords - PM5T4EA MOSFET specs
PM5T4EA cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRF6706S2
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