All MOSFET. PM5T4EA Datasheet

 

PM5T4EA Datasheet and Replacement


   Type Designator: PM5T4EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 49 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT-23
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PM5T4EA Datasheet (PDF)

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PM5T4EA

N-Channel Enhancement Mode Field PM5T4EA NIKO-SEM Effect Transistor SOT-23(S) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 35m 4.3A ESD Protected Gate Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.

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History: TK2P60D | IRFBG20 | DMN2300UFB4 | DMP2104LP | DMN60H3D5SK3

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