All MOSFET. PM5W6EA Datasheet

 

PM5W6EA Datasheet and Replacement


   Type Designator: PM5W6EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.2 nC
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: SOT-23
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PM5W6EA Datasheet (PDF)

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PM5W6EA

N-Channel Enhancement Mode PM5W6EA NIKO-SEM Field Effect Transistor SOT-23(S) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 31m 5A Features ESD Protected Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Gate Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.

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