All MOSFET. PP1C06AKB Datasheet

 

PP1C06AKB Datasheet and Replacement


   Type Designator: PP1C06AKB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 234 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 1945 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
   Package: PDFN5X6P
 

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PP1C06AKB Datasheet (PDF)

 ..1. Size:361K  niko-sem
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PP1C06AKB

N-Channel Enhancement Mode PP1C06AKB NIKO-SEM Field Effect Transistor PDFN 5x6S Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G60V 1.2m 234A G. GATE D. DRAIN S. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V T

Datasheet: PM5W6EA , PP1410AD , PP1410AEA , PP1410AF , PP1410AK , PP1515AD , PP1515AF , PP1515AK , P0903BDG , PP2915AD , PP2915AK , PP2G10AS , PP2G10AT , PP2H06AK , PP2H06AT , PP2H06BK , PP4515BD .

History: HFP6N60U | OSG65R380KF

Keywords - PP1C06AKB MOSFET datasheet

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