PP1C06AKB Specs and Replacement

Type Designator: PP1C06AKB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 234 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 1945 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm

Package: PDFN5X6P

PP1C06AKB substitution

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PP1C06AKB datasheet

 ..1. Size:361K  niko-sem
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PP1C06AKB

N-Channel Enhancement Mode PP1C06AKB NIKO-SEM Field Effect Transistor PDFN 5x6S Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 60V 1.2m 234A G. GATE D. DRAIN S. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V T... See More ⇒

Detailed specifications: PM5W6EA, PP1410AD, PP1410AEA, PP1410AF, PP1410AK, PP1515AD, PP1515AF, PP1515AK, IRF830, PP2915AD, PP2915AK, PP2G10AS, PP2G10AT, PP2H06AK, PP2H06AT, PP2H06BK, PP4515BD

Keywords - PP1C06AKB MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs