PP2G10AT MOSFET. Datasheet pdf. Equivalent
Type Designator: PP2G10AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 183 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 123 nC
trⓘ - Rise Time: 72 nS
Cossⓘ - Output Capacitance: 1241 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00298 Ohm
Package: TO-220
PP2G10AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PP2G10AT Datasheet (PDF)
pp2g10at.pdf
N-Channel Enhancement Mode PP2G10AT NIKO-SEM Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D100V 2.98m 183A G1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T
pp2g10as.pdf
N-Channel Enhancement Mode PP2G10AS NIKO-SEM Field Effect Transistor TO-263 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 2.7m 180A 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
