PP2G10AT Datasheet and Replacement
Type Designator: PP2G10AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 183 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 72 nS
Cossⓘ - Output Capacitance: 1241 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00298 Ohm
Package: TO-220
PP2G10AT substitution
PP2G10AT Datasheet (PDF)
pp2g10at.pdf
N-Channel Enhancement Mode PP2G10AT NIKO-SEM Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D100V 2.98m 183A G1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T
pp2g10as.pdf
N-Channel Enhancement Mode PP2G10AS NIKO-SEM Field Effect Transistor TO-263 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 2.7m 180A 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T
Datasheet: PP1410AK , PP1515AD , PP1515AF , PP1515AK , PP1C06AKB , PP2915AD , PP2915AK , PP2G10AS , AON7403 , PP2H06AK , PP2H06AT , PP2H06BK , PP4515BD , PP4515BK , PP4515BL , PP4B10AD , PP4B10AF .
History: IRFP23N50LPBF | 10N65KL-TN3-R | SPS03N60C3 | IRFS742 | 6LN04SS | FDW262P | MSQ7434N
Keywords - PP2G10AT MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: IRFP23N50LPBF | 10N65KL-TN3-R | SPS03N60C3 | IRFS742 | 6LN04SS | FDW262P | MSQ7434N
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