All MOSFET. PP4B10BK Datasheet

 

PP4B10BK Datasheet and Replacement


   Type Designator: PP4B10BK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 127 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 754 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: PDFN5X6P
 

 PP4B10BK substitution

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PP4B10BK Datasheet (PDF)

 ..1. Size:255K  niko-sem
pp4b10bk.pdf pdf_icon

PP4B10BK

N-Channel Enhancement Mode PP4B10BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 4.2m 127A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source V

 7.1. Size:189K  niko-sem
pp4b10bd.pdf pdf_icon

PP4B10BK

N-Channel Logic Level Enhancement PP4B10BD NIKO-SEM Mode Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 4.2m 100V 127A G 2.DRAIN 3.SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 127 Continuous

 7.2. Size:190K  niko-sem
pp4b10bs.pdf pdf_icon

PP4B10BK

N-Channel Logic Level Enhancement PP4B10BS NIKO-SEM Mode Field Effect Transistor TO-263 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 4.2m 100V 134A G 2.DRAIN 3.SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 134 Continuous

 7.3. Size:189K  niko-sem
pp4b10bf.pdf pdf_icon

PP4B10BK

N-Channel Enhancement Mode PP4B10BF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 4.4m 78A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = 25

Datasheet: PP4515BL , PP4B10AD , PP4B10AF , PP4B10AK , PP4B10AS , PP4B10AT , PP4B10BD , PP4B10BF , IRF840 , PP4B10BS , PP9C15AD , PP9C15AF , PP9C15AK , PP9C15AT , PP9H06BD , PP9H06BEA , PP9H06BI .

History: BLM06N03-D | AONP36320 | JCS2N60CB | MTM24N50 | AONR36326C | AONR32314 | 2SK293

Keywords - PP4B10BK MOSFET datasheet

 PP4B10BK cross reference
 PP4B10BK equivalent finder
 PP4B10BK lookup
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