All MOSFET. PQ5G4JN Datasheet

 

PQ5G4JN Datasheet and Replacement


   Type Designator: PQ5G4JN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 201 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: WLCSP
 

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PQ5G4JN Datasheet (PDF)

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PQ5G4JN

PQ5G4JN NIKO-SEM Common Drain N-Channel WLCSP Power MOSFET Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)SSS RSS(ON) IS 24V 18m 9A 1. Source1 2. Gate1 3. Gate2 4. Source2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Source-Source Voltage VSSS 24 V Gate-Source Voltage VGSS 12 V Continuous Source

Datasheet: PP9C15AF , PP9C15AK , PP9C15AT , PP9H06BD , PP9H06BEA , PP9H06BI , PP9H06BK , PP9H06BV , IRF630 , PQ5U2JN , PQ6S2JN , PQ6V2JN , PQ6X6JN , PR802BA33 , PR812BA33 , PT5B9BA , PT676BA .

History: IPD12CNE8NG | QM3001K | CEF9060N | IPA60R600P6

Keywords - PQ5G4JN MOSFET datasheet

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