All MOSFET. PQ6S2JN Datasheet

 

PQ6S2JN Datasheet and Replacement


   Type Designator: PQ6S2JN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.1 nS
   Cossⓘ - Output Capacitance: 1342 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00135 Ohm
   Package: WLCSP
 

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PQ6S2JN Datasheet (PDF)

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PQ6S2JN

Common Drain N-Channel PQ6S2JN NIKO-SEM Power MOSFET WLCSP Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)SSS RSS(ON) IS 12V 1.35m 26A 1. Gate1 2,3,4,5,6,7,. Source1 8. Gate2 9,10,11,12,13,14,. Source2 Top view Bottom view ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Source-Source Voltage VSSS 1

Datasheet: PP9C15AT , PP9H06BD , PP9H06BEA , PP9H06BI , PP9H06BK , PP9H06BV , PQ5G4JN , PQ5U2JN , IRF3710 , PQ6V2JN , PQ6X6JN , PR802BA33 , PR812BA33 , PT5B9BA , PT676BA , PT6J6BA , PV521BA .

History: TMU3N40ZG

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