PQ6S2JN Specs and Replacement

Type Designator: PQ6S2JN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.1 nS

Cossⓘ - Output Capacitance: 1342 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00135 Ohm

Package: WLCSP

PQ6S2JN substitution

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PQ6S2JN datasheet

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PQ6S2JN

Common Drain N-Channel PQ6S2JN NIKO-SEM Power MOSFET WLCSP Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)SSS RSS(ON) IS 12V 1.35m 26A 1. Gate1 2,3,4,5,6,7,. Source1 8. Gate2 9,10,11,12,13,14,. Source2 Top view Bottom view ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Source-Source Voltage VSSS 1... See More ⇒

Detailed specifications: PP9C15AT, PP9H06BD, PP9H06BEA, PP9H06BI, PP9H06BK, PP9H06BV, PQ5G4JN, PQ5U2JN, AO3400, PQ6V2JN, PQ6X6JN, PR802BA33, PR812BA33, PT5B9BA, PT676BA, PT6J6BA, PV521BA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.