All MOSFET. PQ6S2JN Datasheet

 

PQ6S2JN Datasheet and Replacement


   Type Designator: PQ6S2JN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.1 nS
   Cossⓘ - Output Capacitance: 1342 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00135 Ohm
   Package: WLCSP
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PQ6S2JN Datasheet (PDF)

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PQ6S2JN

Common Drain N-Channel PQ6S2JN NIKO-SEM Power MOSFET WLCSP Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)SSS RSS(ON) IS 12V 1.35m 26A 1. Gate1 2,3,4,5,6,7,. Source1 8. Gate2 9,10,11,12,13,14,. Source2 Top view Bottom view ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Source-Source Voltage VSSS 1

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: SIF5N65F | HGP098N10S | SSM9971GJ | NTP30N06 | IRFB52N15D | ZXM66P02N8TC | UK3018

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