All MOSFET. PQ6V2JN Datasheet

 

PQ6V2JN Datasheet and Replacement


   Type Designator: PQ6V2JN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 0.61 nS
   Cossⓘ - Output Capacitance: 198 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: WLCSP
 

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PQ6V2JN Datasheet (PDF)

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PQ6V2JN

PQ6V2JN NIKO-SEM Common Drain N-Channel WLCSP Power MOSFET Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)SSS RSS(ON) IS 30V 7.8m 14A 1,2,4,5 : Source1 3 : Gate1 8 : Gate2 6,7,9,10 : Source2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Source-Source Voltage VSSS 30 V Gate-Source Voltage VGSS 20 V

Datasheet: PP9H06BD , PP9H06BEA , PP9H06BI , PP9H06BK , PP9H06BV , PQ5G4JN , PQ5U2JN , PQ6S2JN , AON6414A , PQ6X6JN , PR802BA33 , PR812BA33 , PT5B9BA , PT676BA , PT6J6BA , PV521BA , PV555BA .

History: NCE6080D | STP110N8F6 | 2SK3120

Keywords - PQ6V2JN MOSFET datasheet

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