PQ6V2JN Specs and Replacement

Type Designator: PQ6V2JN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 0.61 nS

Cossⓘ - Output Capacitance: 198 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: WLCSP

PQ6V2JN substitution

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PQ6V2JN datasheet

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PQ6V2JN

PQ6V2JN NIKO-SEM Common Drain N-Channel WLCSP Power MOSFET Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)SSS RSS(ON) IS 30V 7.8m 14A 1,2,4,5 Source1 3 Gate1 8 Gate2 6,7,9,10 Source2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Source-Source Voltage VSSS 30 V Gate-Source Voltage VGSS 20 V ... See More ⇒

Detailed specifications: PP9H06BD, PP9H06BEA, PP9H06BI, PP9H06BK, PP9H06BV, PQ5G4JN, PQ5U2JN, PQ6S2JN, IRFB4227, PQ6X6JN, PR802BA33, PR812BA33, PT5B9BA, PT676BA, PT6J6BA, PV521BA, PV555BA

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs