PQ6X6JN Specs and Replacement

Type Designator: PQ6X6JN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 638 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.001375 Ohm

Package: WLCSP

PQ6X6JN substitution

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PQ6X6JN datasheet

 ..1. Size:208K  niko-sem
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PQ6X6JN

Common Drain N-Channel PQ6X6JN NIKO-SEM Power MOSFET WLCSP Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)SSS RSS(ON) IS 12V 2.75m 19A 1,2,4,5. Source1 3. Gate1 6,7,9,10. Source2 Top view Bottom view 8. Gate2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Source-Source Voltage VSSS 12 V Gate-Source... See More ⇒

Detailed specifications: PP9H06BEA, PP9H06BI, PP9H06BK, PP9H06BV, PQ5G4JN, PQ5U2JN, PQ6S2JN, PQ6V2JN, IRF3710, PR802BA33, PR812BA33, PT5B9BA, PT676BA, PT6J6BA, PV521BA, PV555BA, PV561BA

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