All MOSFET. PQ6X6JN Datasheet

 

PQ6X6JN Datasheet and Replacement


   Type Designator: PQ6X6JN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 638 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.001375 Ohm
   Package: WLCSP
 

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PQ6X6JN Datasheet (PDF)

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PQ6X6JN

Common Drain N-Channel PQ6X6JN NIKO-SEM Power MOSFET WLCSP Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)SSS RSS(ON) IS 12V 2.75m 19A 1,2,4,5. Source1 3. Gate1 6,7,9,10. Source2 Top view Bottom view 8. Gate2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Source-Source Voltage VSSS 12 V Gate-Source

Datasheet: PP9H06BEA , PP9H06BI , PP9H06BK , PP9H06BV , PQ5G4JN , PQ5U2JN , PQ6S2JN , PQ6V2JN , P55NF06 , PR802BA33 , PR812BA33 , PT5B9BA , PT676BA , PT6J6BA , PV521BA , PV555BA , PV561BA .

History: SL10N65F | PR802BA33 | CJCD2003 | IPDD60R080G7 | CEM8809 | TSM3457CX6 | BRCS200N03YN

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