PR802BA33 Specs and Replacement

Type Designator: PR802BA33

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 74 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66 nS

Cossⓘ - Output Capacitance: 699 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: POWERFET

PR802BA33 substitution

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PR802BA33 datasheet

 ..1. Size:330K  niko-sem
 pr802ba33.pdf pdf_icon

PR802BA33

N-Channel Enhancement Mode PR802BA33 NIKO-SEM Field Effect Transistor PowerFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 30V 4m 74A G S Features Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. 100% UIS Tested & 100% Rg Tested. Pa... See More ⇒

Detailed specifications: PP9H06BI, PP9H06BK, PP9H06BV, PQ5G4JN, PQ5U2JN, PQ6S2JN, PQ6V2JN, PQ6X6JN, 10N60, PR812BA33, PT5B9BA, PT676BA, PT6J6BA, PV521BA, PV555BA, PV561BA, PV563BA

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.