All MOSFET. PR802BA33 Datasheet

 

PR802BA33 Datasheet and Replacement


   Type Designator: PR802BA33
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 74 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 66 nS
   Cossⓘ - Output Capacitance: 699 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: POWERFET
 

 PR802BA33 substitution

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PR802BA33 Datasheet (PDF)

 ..1. Size:330K  niko-sem
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PR802BA33

N-Channel Enhancement Mode PR802BA33 NIKO-SEM Field Effect Transistor PowerFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D30V 4m 74A GSFeatures Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. 100% UIS Tested & 100% Rg Tested. Pa

Datasheet: PP9H06BI , PP9H06BK , PP9H06BV , PQ5G4JN , PQ5U2JN , PQ6S2JN , PQ6V2JN , PQ6X6JN , IRFB4227 , PR812BA33 , PT5B9BA , PT676BA , PT6J6BA , PV521BA , PV555BA , PV561BA , PV563BA .

History: IRF6708S2 | ME15N25F

Keywords - PR802BA33 MOSFET datasheet

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