All MOSFET. PR812BA33 Datasheet

 

PR812BA33 Datasheet and Replacement


   Type Designator: PR812BA33
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 161 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 1305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
   Package: POWERFET
 

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PR812BA33 Datasheet (PDF)

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PR812BA33

N-Channel Enhancement Mode PR812BA33 NIKO-SEM Field Effect Transistor PowerFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID4 30V 1.2m 161A DFeatures Halogen Free and RoHS compliant. G Low RDS(on) to Minimize Conduction Losses. G: 1 Ohmic Region Good RDS(on) Ratio. D: 6 Optimized Gate Charge to Minimize Switching Losses. SS: 2,3,4,5 100% UIS Te

Datasheet: PP9H06BK , PP9H06BV , PQ5G4JN , PQ5U2JN , PQ6S2JN , PQ6V2JN , PQ6X6JN , PR802BA33 , IRFB4110 , PT5B9BA , PT676BA , PT6J6BA , PV521BA , PV555BA , PV561BA , PV563BA , PV5G3EA .

History: AMF924NE | SIR640ADP

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