PR812BA33 Specs and Replacement

Type Designator: PR812BA33

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 161 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 1305 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm

Package: POWERFET

PR812BA33 substitution

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PR812BA33 datasheet

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PR812BA33

N-Channel Enhancement Mode PR812BA33 NIKO-SEM Field Effect Transistor PowerFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID4 30V 1.2m 161A D Features Halogen Free and RoHS compliant. G Low RDS(on) to Minimize Conduction Losses. G 1 Ohmic Region Good RDS(on) Ratio. D 6 Optimized Gate Charge to Minimize Switching Losses. S S 2,3,4,5 100% UIS Te... See More ⇒

Detailed specifications: PP9H06BK, PP9H06BV, PQ5G4JN, PQ5U2JN, PQ6S2JN, PQ6V2JN, PQ6X6JN, PR802BA33, AON6414A, PT5B9BA, PT676BA, PT6J6BA, PV521BA, PV555BA, PV561BA, PV563BA, PV5G3EA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.