PT5B9BA Specs and Replacement

Type Designator: PT5B9BA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 121 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 1029 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-220

PT5B9BA substitution

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PT5B9BA datasheet

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PT5B9BA

P-Channel Enhancement Mode PT5B9BA NIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID2 -30V 5m -121A D G Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applications ... See More ⇒

Detailed specifications: PP9H06BV, PQ5G4JN, PQ5U2JN, PQ6S2JN, PQ6V2JN, PQ6X6JN, PR802BA33, PR812BA33, IRFB4115, PT676BA, PT6J6BA, PV521BA, PV555BA, PV561BA, PV563BA, PV5G3EA, PV609CA

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs