All MOSFET. PT5B9BA Datasheet

 

PT5B9BA Datasheet and Replacement


   Type Designator: PT5B9BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 121 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 1029 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO-220
 

 PT5B9BA substitution

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PT5B9BA Datasheet (PDF)

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PT5B9BA

P-Channel Enhancement Mode PT5B9BANIKO-SEM TO-220Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID2 -30V 5m -121A DGFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applications

Datasheet: PP9H06BV , PQ5G4JN , PQ5U2JN , PQ6S2JN , PQ6V2JN , PQ6X6JN , PR802BA33 , PR812BA33 , IRFP250N , PT676BA , PT6J6BA , PV521BA , PV555BA , PV561BA , PV563BA , PV5G3EA , PV609CA .

History: ME15N25-G

Keywords - PT5B9BA MOSFET datasheet

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