All MOSFET. PT5B9BA Datasheet

 

PT5B9BA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PT5B9BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 121 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 141 nC
   trⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 1029 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO-220

 PT5B9BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PT5B9BA Datasheet (PDF)

 ..1. Size:218K  niko-sem
 pt5b9ba.pdf

PT5B9BA PT5B9BA

P-Channel Enhancement Mode PT5B9BANIKO-SEM TO-220Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID2 -30V 5m -121A DGFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applications

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FDP61N20

 

 
Back to Top