All MOSFET. PT6J6BA Datasheet

 

PT6J6BA Datasheet and Replacement


   Type Designator: PT6J6BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 112 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 38 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 442 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-220
 

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PT6J6BA Datasheet (PDF)

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PT6J6BA

N-Channel Logic Level Enhancement PT6J6BANIKO-SEM Mode Field Effect Transistor TO-220Halogen-Free & Lead-FreePRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 4m 40V 112A GFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. 1.GA

Datasheet: PQ5U2JN , PQ6S2JN , PQ6V2JN , PQ6X6JN , PR802BA33 , PR812BA33 , PT5B9BA , PT676BA , IRFB4115 , PV521BA , PV555BA , PV561BA , PV563BA , PV5G3EA , PV609CA , PV616DA , PV6A4BA .

History: RQ1E100XN

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