PT6J6BA Datasheet and Replacement
Type Designator: PT6J6BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 112 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 442 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-220
PT6J6BA substitution
PT6J6BA Datasheet (PDF)
pt6j6ba.pdf

N-Channel Logic Level Enhancement PT6J6BANIKO-SEM Mode Field Effect Transistor TO-220Halogen-Free & Lead-FreePRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 4m 40V 112A GFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. 1.GA
Datasheet: PQ5U2JN , PQ6S2JN , PQ6V2JN , PQ6X6JN , PR802BA33 , PR812BA33 , PT5B9BA , PT676BA , IRFB4115 , PV521BA , PV555BA , PV561BA , PV563BA , PV5G3EA , PV609CA , PV616DA , PV6A4BA .
History: SIHF9Z34 | UTT25P10L | STP200NF03 | 2SJ144 | ME4548 | STB80NF55-06T | IPD50P04P4L-11
Keywords - PT6J6BA MOSFET datasheet
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History: SIHF9Z34 | UTT25P10L | STP200NF03 | 2SJ144 | ME4548 | STB80NF55-06T | IPD50P04P4L-11



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