All MOSFET. PV521BA Datasheet

 

PV521BA Datasheet and Replacement


   Type Designator: PV521BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 171 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP-8
 

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PV521BA Datasheet (PDF)

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PV521BA

P-Channel Logic Level Enhancement Mode PV521BA NIKO-SEM SOP-8 Field Effect Transistor Halogen-free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 20m -8.5A -20V GFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.

Datasheet: PQ6S2JN , PQ6V2JN , PQ6X6JN , PR802BA33 , PR812BA33 , PT5B9BA , PT676BA , PT6J6BA , 2SK3878 , PV555BA , PV561BA , PV563BA , PV5G3EA , PV609CA , PV616DA , PV6A4BA , PV6A6BA .

History: IPD800N06NG

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