PV521BA Specs and Replacement

Type Designator: PV521BA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 171 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP-8

PV521BA substitution

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PV521BA datasheet

 ..1. Size:272K  niko-sem
 pv521ba.pdf pdf_icon

PV521BA

P-Channel Logic Level Enhancement Mode PV521BA NIKO-SEM SOP-8 Field Effect Transistor Halogen-free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID 20m -8.5A -20V G Features Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.... See More ⇒

Detailed specifications: PQ6S2JN, PQ6V2JN, PQ6X6JN, PR802BA33, PR812BA33, PT5B9BA, PT676BA, PT6J6BA, 8205A, PV555BA, PV561BA, PV563BA, PV5G3EA, PV609CA, PV616DA, PV6A4BA, PV6A6BA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.