PV521BA Datasheet and Replacement
Type Designator: PV521BA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 171 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP-8
PV521BA substitution
PV521BA Datasheet (PDF)
pv521ba.pdf
P-Channel Logic Level Enhancement Mode PV521BA NIKO-SEM SOP-8 Field Effect Transistor Halogen-free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 20m -8.5A -20V GFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.
Datasheet: PQ6S2JN , PQ6V2JN , PQ6X6JN , PR802BA33 , PR812BA33 , PT5B9BA , PT676BA , PT6J6BA , 8205A , PV555BA , PV561BA , PV563BA , PV5G3EA , PV609CA , PV616DA , PV6A4BA , PV6A6BA .
History: IPS110N12N3 | FQD3N50CTM | MSU7N60T | P0865ETF | 11NM70G-T2Q-T | DH150N12 | AOK160A60
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IPS110N12N3 | FQD3N50CTM | MSU7N60T | P0865ETF | 11NM70G-T2Q-T | DH150N12 | AOK160A60
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