All MOSFET. PV561BA Datasheet

 

PV561BA Datasheet and Replacement


   Type Designator: PV561BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOP-8
 

 PV561BA substitution

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PV561BA Datasheet (PDF)

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PV561BA

P-Channel Logic Level Enhancement Mode PV561BA NIKO-SEM SOP-8 Field Effect Transistor Halogen-free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID -30V 45m -6A GFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G

Datasheet: PQ6X6JN , PR802BA33 , PR812BA33 , PT5B9BA , PT676BA , PT6J6BA , PV521BA , PV555BA , AON7408 , PV563BA , PV5G3EA , PV609CA , PV616DA , PV6A4BA , PV6A6BA , PV6A8BA , PV6D2DA .

History: AM10P10-530I | SRM7N65TF-E1 | RCD100N20 | SFB083N80CC2 | 2SJ345 | HTMN5130SSD | IRL1104LPBF

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