PV563BA Specs and Replacement

Type Designator: PV563BA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 255 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: SOP-8

PV563BA substitution

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PV563BA datasheet

 ..1. Size:230K  niko-sem
 pv563ba.pdf pdf_icon

PV563BA

P-Channel Logic Level Enhancement Mode PV563BA NIKO-SEM SOP-8 Field Effect Transistor Halogen-free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 15m -9.5A -40V G G GATE D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ... See More ⇒

Detailed specifications: PR802BA33, PR812BA33, PT5B9BA, PT676BA, PT6J6BA, PV521BA, PV555BA, PV561BA, IRF630, PV5G3EA, PV609CA, PV616DA, PV6A4BA, PV6A6BA, PV6A8BA, PV6D2DA, PW567EA

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.