All MOSFET. PV563BA Datasheet

 

PV563BA Datasheet and Replacement


   Type Designator: PV563BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 255 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOP-8
 

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PV563BA Datasheet (PDF)

 ..1. Size:230K  niko-sem
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PV563BA

P-Channel Logic Level Enhancement Mode PV563BANIKO-SEM SOP-8Field Effect Transistor Halogen-free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 15m -9.5A -40V GG : GATE D : DRAIN S : SOURCESABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS -40 VGate-Source Voltage VGS

Datasheet: PR802BA33 , PR812BA33 , PT5B9BA , PT676BA , PT6J6BA , PV521BA , PV555BA , PV561BA , 7N65 , PV5G3EA , PV609CA , PV616DA , PV6A4BA , PV6A6BA , PV6A8BA , PV6D2DA , PW567EA .

History: NVBLS001N06C | 2P985B-2

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