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PV5G3EA Specs and Replacement


   Type Designator: PV5G3EA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 796 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: SOP-8
 

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PV5G3EA datasheet

 ..1. Size:279K  niko-sem
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PV5G3EA

P-Channel Logic Level Enhancement Mode PV5G3EA NIKO-SEM SOP-8 Field Effect Transistor Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 8m -15A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Produc... See More ⇒

Detailed specifications: PR812BA33 , PT5B9BA , PT676BA , PT6J6BA , PV521BA , PV555BA , PV561BA , PV563BA , IRF9540 , PV609CA , PV616DA , PV6A4BA , PV6A6BA , PV6A8BA , PV6D2DA , PW567EA , PW5D8EA .

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