PV5G3EA Datasheet and Replacement
Type Designator: PV5G3EA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 88 nS
Cossⓘ - Output Capacitance: 796 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: SOP-8
PV5G3EA substitution
PV5G3EA Datasheet (PDF)
pv5g3ea.pdf

P-Channel Logic Level Enhancement Mode PV5G3EA NIKO-SEM SOP-8 Field Effect Transistor Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 8m -15A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Produc
Datasheet: PR812BA33 , PT5B9BA , PT676BA , PT6J6BA , PV521BA , PV555BA , PV561BA , PV563BA , K3569 , PV609CA , PV616DA , PV6A4BA , PV6A6BA , PV6A8BA , PV6D2DA , PW567EA , PW5D8EA .
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History: 2N3460 | RD3L080SN



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