PV5G3EA Datasheet. Specs and Replacement

Type Designator: PV5G3EA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 88 nS

Cossⓘ - Output Capacitance: 796 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: SOP-8

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PV5G3EA datasheet

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PV5G3EA

P-Channel Logic Level Enhancement Mode PV5G3EA NIKO-SEM SOP-8 Field Effect Transistor Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 8m -15A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Produc... See More ⇒

Detailed specifications: PR812BA33, PT5B9BA, PT676BA, PT6J6BA, PV521BA, PV555BA, PV561BA, PV563BA, IRF4905, PV609CA, PV616DA, PV6A4BA, PV6A6BA, PV6A8BA, PV6D2DA, PW567EA, PW5D8EA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.