All MOSFET. PV6A4BA Datasheet

 

PV6A4BA Datasheet and Replacement


   Type Designator: PV6A4BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP-8
 

 PV6A4BA substitution

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PV6A4BA Datasheet (PDF)

 ..1. Size:357K  niko-sem
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PV6A4BA

PV6A4BA N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G40V 14m 7.8A G: GATE D: DRAIN S: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V TA = 25

Datasheet: PT6J6BA , PV521BA , PV555BA , PV561BA , PV563BA , PV5G3EA , PV609CA , PV616DA , STP75NF75 , PV6A6BA , PV6A8BA , PV6D2DA , PW567EA , PW5D8EA , PW5S6EA , PX567EA , PX567JZ .

History: IXZ2210N50L | IXTH30N50L2 | IXTH12N50A

Keywords - PV6A4BA MOSFET datasheet

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