PV6A8BA Specs and Replacement

Type Designator: PV6A8BA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 271 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: SOP-8

PV6A8BA substitution

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PV6A8BA datasheet

 ..1. Size:244K  niko-sem
 pv6a8ba.pdf pdf_icon

PV6A8BA

PV6A8BA N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 40V 7m 12.4A G GATE D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V TA = 25... See More ⇒

Detailed specifications: PV555BA, PV561BA, PV563BA, PV5G3EA, PV609CA, PV616DA, PV6A4BA, PV6A6BA, IRF9540N, PV6D2DA, PW567EA, PW5D8EA, PW5S6EA, PX567EA, PX567JZ, PX5D8EA, PX5D8JZ-T

Keywords - PV6A8BA MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs