PX5D8JZ-T Datasheet. Specs and Replacement

Type Designator: PX5D8JZ-T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.78 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SOT-563

  📄📄 Copy 

PX5D8JZ-T substitution

- MOSFET ⓘ Cross-Reference Search

 

PX5D8JZ-T datasheet

 ..1. Size:420K  niko-sem
px5d8jz-t.pdf pdf_icon

PX5D8JZ-T

Dual N-Channel Logic Level PX5D8JZ-T NIKO-SEM Enhancement Mode Field Effect Transistor SOT-563 Halogen-Free & Lead-Free PRODUCT SUMMARY 1 2 V(BR)DSS RDS(ON) ID 20V 300m 0.78A 1 2 1 2 Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize... See More ⇒

 9.1. Size:366K  niko-sem
px5d8ea.pdf pdf_icon

PX5D8JZ-T

N-Channel Logic Level Enhancement PX5D8EA NIKO-SEM Mode Field Effect Transistor SOT-523 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 300m 0.8A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD ... See More ⇒

Detailed specifications: PV6A8BA, PV6D2DA, PW567EA, PW5D8EA, PW5S6EA, PX567EA, PX567JZ, PX5D8EA, IRLB4132, PX5S6EA, PX5S6JZ, PX607UZ, PZ5203EMAA, PZ567JZ, PZ5D8EA, PZ5D8JZ, PZ5G7EA

Keywords - PX5D8JZ-T MOSFET specs

 PX5D8JZ-T cross reference

 PX5D8JZ-T equivalent finder

 PX5D8JZ-T pdf lookup

 PX5D8JZ-T substitution

 PX5D8JZ-T replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs