All MOSFET. PX5D8JZ-T Datasheet

 

PX5D8JZ-T MOSFET. Datasheet pdf. Equivalent


   Type Designator: PX5D8JZ-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 0.78 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT-563

 PX5D8JZ-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PX5D8JZ-T Datasheet (PDF)

 ..1. Size:420K  niko-sem
px5d8jz-t.pdf

PX5D8JZ-T
PX5D8JZ-T

Dual N-Channel Logic Level PX5D8JZ-T NIKO-SEM Enhancement Mode Field Effect Transistor SOT-563 Halogen-Free & Lead-Free PRODUCT SUMMARY 1 2 V(BR)DSS RDS(ON) ID 20V 300m 0.78A 1 2 1 2 Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize

 9.1. Size:366K  niko-sem
px5d8ea.pdf

PX5D8JZ-T
PX5D8JZ-T

N-Channel Logic Level Enhancement PX5D8EA NIKO-SEM Mode Field Effect Transistor SOT-523 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 300m 0.8A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top