All MOSFET. PX5D8JZ-T Datasheet

 

PX5D8JZ-T Datasheet and Replacement


   Type Designator: PX5D8JZ-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 0.78 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 1.1 nC
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT-563
 

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PX5D8JZ-T Datasheet (PDF)

 ..1. Size:420K  niko-sem
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PX5D8JZ-T

Dual N-Channel Logic Level PX5D8JZ-T NIKO-SEM Enhancement Mode Field Effect Transistor SOT-563 Halogen-Free & Lead-Free PRODUCT SUMMARY 1 2 V(BR)DSS RDS(ON) ID 20V 300m 0.78A 1 2 1 2 Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize

 9.1. Size:366K  niko-sem
 px5d8ea.pdf pdf_icon

PX5D8JZ-T

N-Channel Logic Level Enhancement PX5D8EA NIKO-SEM Mode Field Effect Transistor SOT-523 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 300m 0.8A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD

Datasheet: PV6A8BA , PV6D2DA , PW567EA , PW5D8EA , PW5S6EA , PX567EA , PX567JZ , PX5D8EA , IRF9540N , PX5S6EA , PX5S6JZ , PX607UZ , PZ5203EMAA , PZ567JZ , PZ5D8EA , PZ5D8JZ , PZ5G7EA .

Keywords - PX5D8JZ-T MOSFET datasheet

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