PX5S6JZ Datasheet and Replacement
Type Designator: PX5S6JZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.57 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: SOT-563
PX5S6JZ substitution
PX5S6JZ Datasheet (PDF)
px5s6jz.pdf

Dual N-Channel Logic Level PX5S6JZ NIKO-SEM Enhancement Mode Field Effect Transistor SOT-563 Halogen-Free & Lead-Free PRODUCT SUMMARY 1 2 V(BR)DSS RDS(ON) ID 30V 480m 0.57A 1 2 1 2 Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize S
px5s6ea.pdf

N-Channel Logic Level Enhancement PX5S6EA NIKO-SEM Mode Field Effect Transistor SOT-523 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 450m 0.68A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD
Datasheet: PW567EA , PW5D8EA , PW5S6EA , PX567EA , PX567JZ , PX5D8EA , PX5D8JZ-T , PX5S6EA , AO4407 , PX607UZ , PZ5203EMAA , PZ567JZ , PZ5D8EA , PZ5D8JZ , PZ5G7EA , PZ5S6EA , PZ5S6JZ .
History: 2SK3550-01R | CEU01N65A | QM3001V | QM3002D
Keywords - PX5S6JZ MOSFET datasheet
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History: 2SK3550-01R | CEU01N65A | QM3001V | QM3002D



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