PZ5D8JZ Datasheet and Replacement
Type Designator: PZ5D8JZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.78 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 19 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT-363
PZ5D8JZ substitution
PZ5D8JZ Datasheet (PDF)
pz5d8jz.pdf
Dual N-Channel Logic Level PZ5D8JZ NIKO-SEM Enhancement Mode Field Effect Transistor SOT-363 Halogen-Free & Lead-Free PRODUCT SUMMARY 1 2 V(BR)DSS RDS(ON) ID 20V 300m 0.78A 1 2 1 2 Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize S
pz5d8ea.pdf
N-Channel Logic Level Enhancement PZ5D8EA NIKO-SEM Mode Field Effect Transistor SOT-323 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 300m 0.84A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD
Datasheet: PX5D8EA , PX5D8JZ-T , PX5S6EA , PX5S6JZ , PX607UZ , PZ5203EMAA , PZ567JZ , PZ5D8EA , IRF1407 , PZ5G7EA , PZ5S6EA , PZ5S6JZ , PZ607UZ , PZC010BL , PZC010HK , PZF010HK , SJMN030R60SCW .
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