All MOSFET. PZ607UZ Datasheet

 

PZ607UZ Datasheet and Replacement


   Type Designator: PZ607UZ
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.53 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT-363
 

 PZ607UZ substitution

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PZ607UZ Datasheet (PDF)

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PZ607UZ

PZ607UZ N- & P-Channel Enhancement Mode NIKO-SEM SOT-363 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 20V 300m 0.78A P-Channel -20V 520m -0.53A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Mi

Datasheet: PX607UZ , PZ5203EMAA , PZ567JZ , PZ5D8EA , PZ5D8JZ , PZ5G7EA , PZ5S6EA , PZ5S6JZ , IRFP450 , PZC010BL , PZC010HK , PZF010HK , SJMN030R60SCW , SJMN041R65SW , SJMN041RH65SW , SJMN065R65W , SJMN070R60SW .

History: NVB6411AN

Keywords - PZ607UZ MOSFET datasheet

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