PZ607UZ MOSFET. Datasheet pdf. Equivalent
Type Designator: PZ607UZ
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 0.53 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 18 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT-363
PZ607UZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PZ607UZ Datasheet (PDF)
..1. Size:482K niko-sem
pz607uz.pdf
pz607uz.pdf
PZ607UZ N- & P-Channel Enhancement Mode NIKO-SEM SOT-363 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 20V 300m 0.78A P-Channel -20V 520m -0.53A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Mi
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