All MOSFET. PZC010HK Datasheet

 

PZC010HK Datasheet and Replacement


   Type Designator: PZC010HK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 16 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.3 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.295 Ohm
   Package: PDFN5X6P
 

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PZC010HK Datasheet (PDF)

 ..1. Size:303K  niko-sem
 pzc010hk.pdf pdf_icon

PZC010HK

Dual N-Channel Enhancement Mode PZC010HK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D1 D1 D2 D2V(BR)DSS RDS(ON) ID Drain Drain100V 295m 4.7A Gate GateG. GATE D. DRAIN S. SOURCE Source Source#1 S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drai

 8.1. Size:263K  niko-sem
 pzc010bl.pdf pdf_icon

PZC010HK

PZC010BL N-Channel Enhancement Mode NIKO-SEM SOT-223 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 295m 2.2A 1. GATE ESD Protected Gate 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 16 V TA = 25 C 2.2 Continu

Datasheet: PZ567JZ , PZ5D8EA , PZ5D8JZ , PZ5G7EA , PZ5S6EA , PZ5S6JZ , PZ607UZ , PZC010BL , 18N50 , PZF010HK , SJMN030R60SCW , SJMN041R65SW , SJMN041RH65SW , SJMN065R65W , SJMN070R60SW , SJMN074R65SW , SJMN074RH65SW .

History: CEM2163

Keywords - PZC010HK MOSFET datasheet

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