SJMN850R80ZD Specs and Replacement

Type Designator: SJMN850R80ZD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 66 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-252

SJMN850R80ZD substitution

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SJMN850R80ZD datasheet

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SJMN850R80ZD

SJMN850R80ZD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =850V (@T =150 C) DS J D Low drain-source On resistance R =0.85 (Max.) DS(on) Built-in ESD Diode RoHS compliant and Halogen free device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SJMN850R80ZD SJMN850R8... See More ⇒

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SJMN850R80ZD

SJMN850R80ZF Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN850R80ZF N850R80Z TO-220F-3L Marking Information Column 1 ... See More ⇒

Detailed specifications: SJMN600R70D, SJMN600R70I, SJMN600R70MD, SJMN600R70MF, SJMN600R70ZD, SJMN600R70ZF, SJMN670R80ZD, SJMN670R80ZF, 10N60, SJMN850R80ZF, SMK0260DN, SMK0260F, SMK0260I, SMK0460D, SMK0465I, SMK0760F, SMK0780F

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.