All MOSFET. SJMN850R80ZD Datasheet

 

SJMN850R80ZD Datasheet and Replacement


   Type Designator: SJMN850R80ZD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-252
 

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SJMN850R80ZD Datasheet (PDF)

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SJMN850R80ZD

SJMN850R80ZD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =850V (@T =150C) DS JD Low drain-source On resistance: R =0.85 (Max.) DS(on) Built-in ESD Diode RoHS compliant and Halogen free device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SJMN850R80ZD SJMN850R8

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SJMN850R80ZD

SJMN850R80ZF Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN850R80ZF N850R80Z TO-220F-3L Marking Information Column 1:

Datasheet: SJMN600R70D , SJMN600R70I , SJMN600R70MD , SJMN600R70MF , SJMN600R70ZD , SJMN600R70ZF , SJMN670R80ZD , SJMN670R80ZF , 10N60 , SJMN850R80ZF , SMK0260DN , SMK0260F , SMK0260I , SMK0460D , SMK0465I , SMK0760F , SMK0780F .

Keywords - SJMN850R80ZD MOSFET datasheet

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