SJMN850R80ZF Specs and Replacement
Type Designator: SJMN850R80ZF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 16 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220F
SJMN850R80ZF substitution
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SJMN850R80ZF datasheet
sjmn850r80zf.pdf
SJMN850R80ZF Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN850R80ZF N850R80Z TO-220F-3L Marking Information Column 1 ... See More ⇒
sjmn850r80zd.pdf
SJMN850R80ZD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =850V (@T =150 C) DS J D Low drain-source On resistance R =0.85 (Max.) DS(on) Built-in ESD Diode RoHS compliant and Halogen free device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SJMN850R80ZD SJMN850R8... See More ⇒
Detailed specifications: SJMN600R70I, SJMN600R70MD, SJMN600R70MF, SJMN600R70ZD, SJMN600R70ZF, SJMN670R80ZD, SJMN670R80ZF, SJMN850R80ZD, AON6414A, SMK0260DN, SMK0260F, SMK0260I, SMK0460D, SMK0465I, SMK0760F, SMK0780F, SMK1040F
Keywords - SJMN850R80ZF MOSFET specs
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