SMN630LD Specs and Replacement
Type Designator: SMN630LD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 79 nS
Cossⓘ - Output Capacitance: 84 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
Package: TO-252
SMN630LD substitution
- MOSFET ⓘ Cross-Reference Search
SMN630LD datasheet
smn630ld.pdf
SMN630LD Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features Drain-Source breakdown voltage BV =200V (Min.) DSS Low gate charge Q =12nC (Typ.) g Low drain-source On-Resistance R =0.34 (Typ.) DS(on) D 100% avalanche tested RoHS compliant device Ordering Information G S Part Number Marking Package TO-252 SMN630LD SMN630L TO-... See More ⇒
Detailed specifications: SMK0460D, SMK0465I, SMK0760F, SMK0780F, SMK1040F, SMK1065F, SMN03T80I, SMN0665FD, 2N7002, SNA3100L10NL, SNA3100L10NN, SNN055N085D, SNN060L10F, SNN060L10NL, SNN10R10LD, SNN10R10LF, SNN1120L10Q
Keywords - SMN630LD MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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