All MOSFET. SMN630LD Datasheet

 

SMN630LD Datasheet and Replacement


   Type Designator: SMN630LD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
   Package: TO-252
 

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SMN630LD Datasheet (PDF)

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SMN630LD

SMN630LD Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features Drain-Source breakdown voltage: BV =200V (Min.) DSS Low gate charge: Q =12nC (Typ.) g Low drain-source On-Resistance: R =0.34 (Typ.) DS(on)D 100% avalanche tested RoHS compliant device Ordering Information G S Part Number Marking Package TO-252 SMN630LD SMN630L TO-

Datasheet: SMK0460D , SMK0465I , SMK0760F , SMK0780F , SMK1040F , SMK1065F , SMN03T80I , SMN0665FD , K3569 , SNA3100L10NL , SNA3100L10NN , SNN055N085D , SNN060L10F , SNN060L10NL , SNN10R10LD , SNN10R10LF , SNN1120L10Q .

History: SUM90N03-2M2P | AON2401

Keywords - SMN630LD MOSFET datasheet

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