SMN630LD Specs and Replacement

Type Designator: SMN630LD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 79 nS

Cossⓘ - Output Capacitance: 84 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm

Package: TO-252

SMN630LD substitution

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SMN630LD datasheet

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SMN630LD

SMN630LD Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features Drain-Source breakdown voltage BV =200V (Min.) DSS Low gate charge Q =12nC (Typ.) g Low drain-source On-Resistance R =0.34 (Typ.) DS(on) D 100% avalanche tested RoHS compliant device Ordering Information G S Part Number Marking Package TO-252 SMN630LD SMN630L TO-... See More ⇒

Detailed specifications: SMK0460D, SMK0465I, SMK0760F, SMK0780F, SMK1040F, SMK1065F, SMN03T80I, SMN0665FD, 2N7002, SNA3100L10NL, SNA3100L10NN, SNN055N085D, SNN060L10F, SNN060L10NL, SNN10R10LD, SNN10R10LF, SNN1120L10Q

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.