All MOSFET. SNA3100L10NL Datasheet

 

SNA3100L10NL Datasheet and Replacement


   Type Designator: SNA3100L10NL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 21.6 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TESOP-8
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SNA3100L10NL Datasheet (PDF)

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SNA3100L10NL

SNA3100L10NL Dual N-Ch Enhancement Mode MOSFET Logic Level Gate Drive Application Features Low On-state resistance: 310m at V = 10V, I = 2A GS D Low gate charge: Q = 7nC (Typ.) at V = 10V g GS High performance trench technology Halogen free and RoHS compliant device Ordering Information Part Number Marking Package TESOP-8 SNA3100L10NL 3100L10 (DFN 5x

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SNA3100L10NL

SNA3100L10NN Dual N-Ch Enhancement Mode MOSFET Logic Level Gate Drive Application Features Low On-state resistance: 310m at V = 10V, I = 2A GS D Low gate charge: Q = 7nC(Typ.) at V = 10V g GS High performance trench technology Halogen free and RoHS compliant device Ordering Information Part Number Marking Package TESOP-8M SNA3100L10NN 3100L10 (DFN 3x

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FCPF7N60YDTU | SM6A12NSFP | AP6679GI-HF | H7N1002LM | SPD04N60S5

Keywords - SNA3100L10NL MOSFET datasheet

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