All MOSFET. SNA3100L10NL Datasheet

 

SNA3100L10NL MOSFET. Datasheet pdf. Equivalent


   Type Designator: SNA3100L10NL
   Marking Code: 3100L10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3 nC
   trⓘ - Rise Time: 21.6 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TESOP-8

 SNA3100L10NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SNA3100L10NL Datasheet (PDF)

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 sna3100l10nl.pdf

SNA3100L10NL SNA3100L10NL

SNA3100L10NL Dual N-Ch Enhancement Mode MOSFET Logic Level Gate Drive Application Features Low On-state resistance: 310m at V = 10V, I = 2A GS D Low gate charge: Q = 7nC (Typ.) at V = 10V g GS High performance trench technology Halogen free and RoHS compliant device Ordering Information Part Number Marking Package TESOP-8 SNA3100L10NL 3100L10 (DFN 5x

 3.1. Size:474K  auk
 sna3100l10nn.pdf

SNA3100L10NL SNA3100L10NL

SNA3100L10NN Dual N-Ch Enhancement Mode MOSFET Logic Level Gate Drive Application Features Low On-state resistance: 310m at V = 10V, I = 2A GS D Low gate charge: Q = 7nC(Typ.) at V = 10V g GS High performance trench technology Halogen free and RoHS compliant device Ordering Information Part Number Marking Package TESOP-8M SNA3100L10NN 3100L10 (DFN 3x

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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