SNA3100L10NL Specs and Replacement

Type Designator: SNA3100L10NL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.6 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm

Package: TESOP-8

SNA3100L10NL substitution

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SNA3100L10NL datasheet

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SNA3100L10NL

SNA3100L10NL Dual N-Ch Enhancement Mode MOSFET Logic Level Gate Drive Application Features Low On-state resistance 310m at V = 10V, I = 2A GS D Low gate charge Q = 7nC (Typ.) at V = 10V g GS High performance trench technology Halogen free and RoHS compliant device Ordering Information Part Number Marking Package TESOP-8 SNA3100L10NL 3100L10 (DFN 5x... See More ⇒

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SNA3100L10NL

SNA3100L10NN Dual N-Ch Enhancement Mode MOSFET Logic Level Gate Drive Application Features Low On-state resistance 310m at V = 10V, I = 2A GS D Low gate charge Q = 7nC(Typ.) at V = 10V g GS High performance trench technology Halogen free and RoHS compliant device Ordering Information Part Number Marking Package TESOP-8M SNA3100L10NN 3100L10 (DFN 3x... See More ⇒

Detailed specifications: SMK0465I, SMK0760F, SMK0780F, SMK1040F, SMK1065F, SMN03T80I, SMN0665FD, SMN630LD, IRF9540N, SNA3100L10NN, SNN055N085D, SNN060L10F, SNN060L10NL, SNN10R10LD, SNN10R10LF, SNN1120L10Q, SNN1530NL

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