All MOSFET. SNN055N085D Datasheet

 

SNN055N085D Datasheet and Replacement


   Type Designator: SNN055N085D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 148 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1391 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-252
 

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SNN055N085D Datasheet (PDF)

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SNN055N085D

SNN055N085D N-Ch Trench MOSFET Power Switching Application Features Drain-source breakdown voltage: BV =85V DSS Low gate charge device D Low drain-source On resistance: R =5.5m (Max.) DS(on) Advanced trench process technology High avalanche energy, 100% test G S Ordering Information TO-252 Part Number Marking Package SNN055N085D SNN055N085 T

Datasheet: SMK0780F , SMK1040F , SMK1065F , SMN03T80I , SMN0665FD , SMN630LD , SNA3100L10NL , SNA3100L10NN , 5N60 , SNN060L10F , SNN060L10NL , SNN10R10LD , SNN10R10LF , SNN1120L10Q , SNN1530NL , SNN1830NL , SNN200L10D .

History: KX4N60F

Keywords - SNN055N085D MOSFET datasheet

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