SNN055N085D MOSFET. Datasheet pdf. Equivalent
Type Designator: SNN055N085D
Marking Code: SNN055N085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 148 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 82 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 1391 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO-252
SNN055N085D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SNN055N085D Datasheet (PDF)
snn055n085d.pdf
SNN055N085D N-Ch Trench MOSFET Power Switching Application Features Drain-source breakdown voltage: BV =85V DSS Low gate charge device D Low drain-source On resistance: R =5.5m (Max.) DS(on) Advanced trench process technology High avalanche energy, 100% test G S Ordering Information TO-252 Part Number Marking Package SNN055N085D SNN055N085 T
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BUK6218-40C | DMP22D6UT
History: BUK6218-40C | DMP22D6UT
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