SNN1120L10Q Specs and Replacement

Type Designator: SNN1120L10Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: SOT-223

SNN1120L10Q substitution

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SNN1120L10Q datasheet

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SNN1120L10Q

SNN1120L10Q Advanced N-Ch Trench MOSFET 100V Fast Switching MOSFETs Features Low On-state resistance 112m at V = 10V, I = 2A GS D Low gate charge Q = 26.2nC (Typ.) g High performance trench technology 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package SOT-223 SNN1120L10Q... See More ⇒

Detailed specifications: SMN630LD, SNA3100L10NL, SNA3100L10NN, SNN055N085D, SNN060L10F, SNN060L10NL, SNN10R10LD, SNN10R10LF, SPP20N60C3, SNN1530NL, SNN1830NL, SNN200L10D, SNN300L06D, SNN3100L10D, SNN3100L10Q, SNN3100L15Q, SNN3530BNL

Keywords - SNN1120L10Q MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.