All MOSFET. SNN1120L10Q Datasheet

 

SNN1120L10Q Datasheet and Replacement


   Type Designator: SNN1120L10Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-223
 

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SNN1120L10Q Datasheet (PDF)

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SNN1120L10Q

SNN1120L10Q Advanced N-Ch Trench MOSFET 100V Fast Switching MOSFETs Features Low On-state resistance: 112m at V = 10V, I = 2A GS D Low gate charge: Q = 26.2nC (Typ.) g High performance trench technology 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package SOT-223 SNN1120L10Q

Datasheet: SMN630LD , SNA3100L10NL , SNA3100L10NN , SNN055N085D , SNN060L10F , SNN060L10NL , SNN10R10LD , SNN10R10LF , SPP20N60C3 , SNN1530NL , SNN1830NL , SNN200L10D , SNN300L06D , SNN3100L10D , SNN3100L10Q , SNN3100L15Q , SNN3530BNL .

History: P1203EV | SI7913DN

Keywords - SNN1120L10Q MOSFET datasheet

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