All MOSFET. SNN200L10D Datasheet

 

SNN200L10D Datasheet and Replacement


   Type Designator: SNN200L10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 49 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 279 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO-252
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SNN200L10D Datasheet (PDF)

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SNN200L10D

SNN200L10D N-Ch Trench MOSFET Power Switching Application Features Drain-source breakdown voltage: BV =100V DSS Low gate charge device D Low drain-source On resistance: R =20m (Typ.) DS(on) Advanced trench process technology High avalanche energy, 100% test G Ordering Information S Part Number Marking Package TO-252 SNN200L10D SNN200L10 TO-

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History: DMN3042L | HLML6401 | HAT2197WP | NP160N04TUJ | NDT4N60 | HM1404C | AP85T03GH-HF

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