SNN200L10D Specs and Replacement

Type Designator: SNN200L10D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 49 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 279 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO-252

SNN200L10D substitution

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SNN200L10D datasheet

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SNN200L10D

SNN200L10D N-Ch Trench MOSFET Power Switching Application Features Drain-source breakdown voltage BV =100V DSS Low gate charge device D Low drain-source On resistance R =20m (Typ.) DS(on) Advanced trench process technology High avalanche energy, 100% test G Ordering Information S Part Number Marking Package TO-252 SNN200L10D SNN200L10 TO-... See More ⇒

Detailed specifications: SNN055N085D, SNN060L10F, SNN060L10NL, SNN10R10LD, SNN10R10LF, SNN1120L10Q, SNN1530NL, SNN1830NL, 13N50, SNN300L06D, SNN3100L10D, SNN3100L10Q, SNN3100L15Q, SNN3530BNL, SNN3530NL, SNP130L04F, SNP250L06F

Keywords - SNN200L10D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.