All MOSFET. SRN1660FD Datasheet

 

SRN1660FD Datasheet and Replacement


   Type Designator: SRN1660FD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 121 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO-220F
 

 SRN1660FD substitution

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SRN1660FD Datasheet (PDF)

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SRN1660FD

SRN1660FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.47 (Max.) DS(on) Low gate charge: Q =50nC (Typ.) g Low reverse transfer capacitance: C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Markin

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SRN1660FD

SRN1660F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.47 (Max.) DS(on) Low gate charge: Q =50nC (Typ.) g Low reverse transfer capacitance: C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking

 8.1. Size:618K  auk
 srn1665fd.pdf pdf_icon

SRN1660FD

SRN1665FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.46 (Typ.) DS(on) Low gate charge: Q =50nC (Typ.) g Low reverse transfer capacitance: C =22pF (Typ.) rss Lower EMI noise RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Markin

Datasheet: SNN3530BNL , SNN3530NL , SNP130L04F , SNP250L06F , SRN0765D , SRN0765F , SRN127 , SRN1660F , IRFZ24N , SRN1665FD , SRN1860F , SRN1860FD , SRN1865FD , SUN05A25F , SUN05A50ZD , SUN05A50ZF , SUN09A40D .

History: SRT15N750LD56 | SWP10N65

Keywords - SRN1660FD MOSFET datasheet

 SRN1660FD cross reference
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