All MOSFET. SUN82A20CI Datasheet

 

SUN82A20CI Datasheet and Replacement


   Type Designator: SUN82A20CI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 198 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 82 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 984 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-3P
 

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SUN82A20CI Datasheet (PDF)

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SUN82A20CI

SUN82A20CI Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV =200V (Min.) DSS Low gate charge: Q =145nC (Typ.) g Low drain-source On resistance: R =23m (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-3P SUN82A20CI SUN82A20 TO

Datasheet: SRN1860F , SRN1860FD , SRN1865FD , SUN05A25F , SUN05A50ZD , SUN05A50ZF , SUN09A40D , SUN50A20CI , 2N60 , SUN830D , SUN830DN , SUN830F , SUN830I , QM1830M3 , AOCR33105E , AOCR35101E , AOCR36330 .

History: GSM2301A

Keywords - SUN82A20CI MOSFET datasheet

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