SUN82A20CI Specs and Replacement
Type Designator: SUN82A20CI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 198 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 82 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 984 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO-3P
SUN82A20CI substitution
SUN82A20CI datasheet
sun82a20ci.pdf
SUN82A20CI Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage BV =200V (Min.) DSS Low gate charge Q =145nC (Typ.) g Low drain-source On resistance R =23m (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-3P SUN82A20CI SUN82A20 TO... See More ⇒
Detailed specifications: SRN1860F , SRN1860FD , SRN1865FD , SUN05A25F , SUN05A50ZD , SUN05A50ZF , SUN09A40D , SUN50A20CI , SI2302 , SUN830D , SUN830DN , SUN830F , SUN830I , QM1830M3 , AOCR33105E , AOCR35101E , AOCR36330 .
Keywords - SUN82A20CI MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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