AOCR33105E Specs and Replacement

Type Designator: AOCR33105E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3600 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: CSP2.08X1.45-10L

AOCR33105E substitution

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AOCR33105E datasheet

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AOCR33105E

AOCR33105E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCR33105E

AOCR35101E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V) ... See More ⇒

 9.2. Size:670K  aosemi
 aocr32326.pdf pdf_icon

AOCR33105E

AOCR32326 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V) ... See More ⇒

 9.3. Size:670K  aosemi
 aocr36330.pdf pdf_icon

AOCR33105E

AOCR36330 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: SUN09A40D, SUN50A20CI, SUN82A20CI, SUN830D, SUN830DN, SUN830F, SUN830I, QM1830M3, STF13NM60N, AOCR35101E, AOCR36330, AOCR32326, AOCA32112E, AOCA32116E, AOCA24108E, AOCA32106E, AOCA72114

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.