AOCR33105E Datasheet and Replacement
Type Designator: AOCR33105E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3600 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: CSP2.08X1.45-10L
AOCR33105E substitution
AOCR33105E Datasheet (PDF)
aocr33105e.pdf

AOCR33105E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aocr35101e.pdf

AOCR35101E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aocr32326.pdf

AOCR3232630V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V)
aocr36330.pdf

AOCR3633030V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V)
Datasheet: SUN09A40D , SUN50A20CI , SUN82A20CI , SUN830D , SUN830DN , SUN830F , SUN830I , QM1830M3 , IRFZ24N , AOCR35101E , AOCR36330 , AOCR32326 , AOCA32112E , AOCA32116E , AOCA24108E , AOCA32106E , AOCA72114 .
History: AON2401 | SUM90N03-2M2P
Keywords - AOCR33105E MOSFET datasheet
AOCR33105E cross reference
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History: AON2401 | SUM90N03-2M2P



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