AOCR33105E MOSFET. Datasheet pdf. Equivalent

   Type Designator: AOCR33105E
   Marking Code: P*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 3600 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: CSP2.08X1.45-10L

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