All MOSFET. AOCR33105E Datasheet

 

AOCR33105E Datasheet and Replacement


   Type Designator: AOCR33105E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3600 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: CSP2.08X1.45-10L
 

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AOCR33105E Datasheet (PDF)

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AOCR33105E

AOCR33105E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 9.1. Size:590K  aosemi
 aocr35101e.pdf pdf_icon

AOCR33105E

AOCR35101E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 9.2. Size:670K  aosemi
 aocr32326.pdf pdf_icon

AOCR33105E

AOCR3232630V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V)

 9.3. Size:670K  aosemi
 aocr36330.pdf pdf_icon

AOCR33105E

AOCR3633030V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V)

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Datasheet: SUN09A40D , SUN50A20CI , SUN82A20CI , SUN830D , SUN830DN , SUN830F , SUN830I , QM1830M3 , STF13NM60N , AOCR35101E , AOCR36330 , AOCR32326 , AOCA32112E , AOCA32116E , AOCA24108E , AOCA32106E , AOCA72114 .

History: IRF6217PBF-1

Keywords - AOCR33105E MOSFET datasheet

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