All MOSFET. AOCR32326 Datasheet

 

AOCR32326 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOCR32326
   Marking Code: 32326
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 142 nC
   trⓘ - Rise Time: 80 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: CSP6X2.5-8

 AOCR32326 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOCR32326 Datasheet (PDF)

 ..1. Size:670K  aosemi
 aocr32326.pdf

AOCR32326 AOCR32326

AOCR3232630V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V)

 9.1. Size:590K  aosemi
 aocr35101e.pdf

AOCR32326 AOCR32326

AOCR35101E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 9.2. Size:758K  aosemi
 aocr33105e.pdf

AOCR32326 AOCR32326

AOCR33105E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 9.3. Size:670K  aosemi
 aocr36330.pdf

AOCR32326 AOCR32326

AOCR3633030V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUK9575-100A

 

 
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