AOCR32326 Datasheet and Replacement
Type Designator: AOCR32326
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: CSP6X2.5-8
AOCR32326 substitution
AOCR32326 Datasheet (PDF)
aocr32326.pdf

AOCR3232630V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V)
aocr35101e.pdf

AOCR35101E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aocr33105e.pdf

AOCR33105E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aocr36330.pdf

AOCR3633030V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V)
Datasheet: SUN830D , SUN830DN , SUN830F , SUN830I , QM1830M3 , AOCR33105E , AOCR35101E , AOCR36330 , IRFB31N20D , AOCA32112E , AOCA32116E , AOCA24108E , AOCA32106E , AOCA72114 , AOCA32301 , AOCA24106C , AOCA24106E .
History: SCT2160KE | WMK030N06HG4 | BSC0805LS | PMV185XN | SED4060G | STD2NK90Z | SI2343CDS
Keywords - AOCR32326 MOSFET datasheet
AOCR32326 cross reference
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History: SCT2160KE | WMK030N06HG4 | BSC0805LS | PMV185XN | SED4060G | STD2NK90Z | SI2343CDS



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