All MOSFET. AOCA24106C Datasheet

 

AOCA24106C Datasheet and Replacement


   Type Designator: AOCA24106C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1700 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: DFN1.90X1.60-6L
 

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AOCA24106C Datasheet (PDF)

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AOCA24106C

AOCA24106C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

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AOCA24106C

AOCA24106E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

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AOCA24106C

AOCA24108E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

Datasheet: AOCR36330 , AOCR32326 , AOCA32112E , AOCA32116E , AOCA24108E , AOCA32106E , AOCA72114 , AOCA32301 , MMIS60R580P , AOCA24106E , AOCA33103E , AOCA33104A , AOCA33104E , AOCA72104E , AONT21313C , AONT32136C , AOC3870A .

History: HYG800P10LR1D | TK5P60W | AM10N30-600I | SNN0310Q | APT10M19BVRG | IRL520LPBF | IRF7210TR

Keywords - AOCA24106C MOSFET datasheet

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