All MOSFET. AONT21313C Datasheet

 

AONT21313C Datasheet and Replacement


   Type Designator: AONT21313C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: DFN2X2-6L
 

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AONT21313C Datasheet (PDF)

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AONT21313C

AONT21313C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -7.4A High Current Capability RDS(ON) (at VGS=-10V)

Datasheet: AOCA72114 , AOCA32301 , AOCA24106C , AOCA24106E , AOCA33103E , AOCA33104A , AOCA33104E , AOCA72104E , 8N60 , AONT32136C , AOC3870A , AOCA32107E , AOC3870C , AOCA32108E , AOCA35212E , AOC3860A , AOC3860C .

History: PTA08N100 | 3SK323

Keywords - AONT21313C MOSFET datasheet

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