AONT21313C Specs and Replacement

Type Designator: AONT21313C

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: DFN2X2-6L

AONT21313C substitution

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AONT21313C datasheet

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AONT21313C

AONT21313C 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -7.4A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

Detailed specifications: AOCA72114, AOCA32301, AOCA24106C, AOCA24106E, AOCA33103E, AOCA33104A, AOCA33104E, AOCA72104E, IRFB7545, AONT32136C, AOC3870A, AOCA32107E, AOC3870C, AOCA32108E, AOCA35212E, AOC3860A, AOC3860C

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