AOCA32108E Specs and Replacement

Type Designator: AOCA32108E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3000 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: DFN3.01X1.52B-10L

AOCA32108E substitution

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AOCA32108E datasheet

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AOCA32108E

AOCA32108E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCA32108E

AOCA32107E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCA32108E

AOCA32106E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCA32108E

AOCA32112E 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

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Detailed specifications: AOCA33104A, AOCA33104E, AOCA72104E, AONT21313C, AONT32136C, AOC3870A, AOCA32107E, AOC3870C, MMIS60R580P, AOCA35212E, AOC3860A, AOC3860C, AOCA33102E, AOCA36116C, AOCA32317, AONR30310, AONR32318

Keywords - AOCA32108E MOSFET specs

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