All MOSFET. AOCA32108E Datasheet

 

AOCA32108E Datasheet and Replacement


   Type Designator: AOCA32108E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3000 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: DFN3.01X1.52B-10L
 

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AOCA32108E Datasheet (PDF)

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AOCA32108E

AOCA32108E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

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AOCA32108E

AOCA32107E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 6.2. Size:772K  aosemi
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AOCA32108E

AOCA32106E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 7.1. Size:590K  aosemi
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AOCA32108E

AOCA32112E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

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Datasheet: AOCA33104A , AOCA33104E , AOCA72104E , AONT21313C , AONT32136C , AOC3870A , AOCA32107E , AOC3870C , MMIS60R580P , AOCA35212E , AOC3860A , AOC3860C , AOCA33102E , AOCA36116C , AOCA32317 , AONR30310 , AONR32318 .

History: BRCS120P03YB

Keywords - AOCA32108E MOSFET datasheet

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