AOCA35212E Datasheet and Replacement
Type Designator: AOCA35212E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3600 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: DFN3.03X3.03-14L
AOCA35212E substitution
AOCA35212E Datasheet (PDF)
aoca35212e.pdf

AOCA35212E24V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 24V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=10V)
aoca32112e.pdf

AOCA32112E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoca32317.pdf

AOCA3231730V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) ESD protection RSS(ON) (at VGS=10V)
aoca33103e.pdf

AOCA33103E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
Datasheet: AOCA33104E , AOCA72104E , AONT21313C , AONT32136C , AOC3870A , AOCA32107E , AOC3870C , AOCA32108E , AO4468 , AOC3860A , AOC3860C , AOCA33102E , AOCA36116C , AOCA32317 , AONR30310 , AONR32318 , AONR34332C .
History: AP2346GN | 3SK263 | 2SK4107 | STU438A | BSZ058N03LS | SM3114NSU | SUK3015
Keywords - AOCA35212E MOSFET datasheet
AOCA35212E cross reference
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History: AP2346GN | 3SK263 | 2SK4107 | STU438A | BSZ058N03LS | SM3114NSU | SUK3015



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