AOCA35212E Specs and Replacement

Type Designator: AOCA35212E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3600 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: DFN3.03X3.03-14L

AOCA35212E substitution

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AOCA35212E datasheet

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AOCA35212E

AOCA35212E 24V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 24V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=10V) ... See More ⇒

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AOCA35212E

AOCA32112E 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

 9.2. Size:732K  aosemi
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AOCA35212E

AOCA32317 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 30V Low RSS(ON) ESD protection RSS(ON) (at VGS=10V) ... See More ⇒

 9.3. Size:761K  aosemi
aoca33103e.pdf pdf_icon

AOCA35212E

AOCA33103E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V) ... See More ⇒

Detailed specifications: AOCA33104E, AOCA72104E, AONT21313C, AONT32136C, AOC3870A, AOCA32107E, AOC3870C, AOCA32108E, AOD4184A, AOC3860A, AOC3860C, AOCA33102E, AOCA36116C, AOCA32317, AONR30310, AONR32318, AONR34332C

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