AOCA35212E Datasheet and Replacement
Type Designator: AOCA35212E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id|ⓘ - Maximum Drain Current: 34 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 3600 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: DFN3.03X3.03-14L
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AOCA35212E Datasheet (PDF)
aoca35212e.pdf

AOCA35212E24V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 24V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=10V)
aoca32112e.pdf

AOCA32112E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoca32317.pdf

AOCA3231730V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) ESD protection RSS(ON) (at VGS=10V)
aoca33103e.pdf

AOCA33103E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IRFS7437-7PPBF | SRT10N160LD | NCE30P12BS | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL
Keywords - AOCA35212E MOSFET datasheet
AOCA35212E cross reference
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History: IRFS7437-7PPBF | SRT10N160LD | NCE30P12BS | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL



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