AONR30310 Datasheet and Replacement
Type Designator: AONR30310
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 190 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 1580 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
Package: DFN3.3X3.3-8L
AONR30310 substitution
AONR30310 Datasheet (PDF)
aonr30310.pdf
AONR3031030V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 190A Low Gate Charge RDS(ON) (at VGS=10V)
aonr32340c.pdf
AONR32340C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
aonr36321.pdf
AONR3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V)
aonr34332c.pdf
AONR34332C30V N-Channel MOSFETGeneral Description Product Summary Trench Power MOSFET technologyVDS30V Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AOC3870C , AOCA32108E , AOCA35212E , AOC3860A , AOC3860C , AOCA33102E , AOCA36116C , AOCA32317 , IRFZ44N , AONR32318 , AONR34332C , AONR36321 , AONR62921 , AONR66820 , AONR66821 , AONR66922 , AONE38132 .
History: MPSA60M370
Keywords - AONR30310 MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MPSA60M370
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