All MOSFET. AONR30310 Datasheet

 

AONR30310 Datasheet and Replacement


   Type Designator: AONR30310
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 1580 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
   Package: DFN3.3X3.3-8L
 

 AONR30310 substitution

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AONR30310 Datasheet (PDF)

 ..1. Size:408K  aosemi
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AONR30310

AONR3031030V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 190A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:533K  1
 aonr32340c.pdf pdf_icon

AONR30310

AONR32340C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:371K  aosemi
 aonr36321.pdf pdf_icon

AONR30310

AONR3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:844K  aosemi
 aonr34332c.pdf pdf_icon

AONR30310

AONR34332C30V N-Channel MOSFETGeneral Description Product Summary Trench Power MOSFET technologyVDS30V Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AOC3870C , AOCA32108E , AOCA35212E , AOC3860A , AOC3860C , AOCA33102E , AOCA36116C , AOCA32317 , IRFZ44N , AONR32318 , AONR34332C , AONR36321 , AONR62921 , AONR66820 , AONR66821 , AONR66922 , AONE38132 .

History: 13N50MF

Keywords - AONR30310 MOSFET datasheet

 AONR30310 cross reference
 AONR30310 equivalent finder
 AONR30310 lookup
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