All MOSFET. AONR30310 Datasheet

 

AONR30310 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONR30310
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 190 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 1580 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
   Package: DFN3.3X3.3-8L

 AONR30310 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONR30310 Datasheet (PDF)

 ..1. Size:408K  aosemi
 aonr30310.pdf

AONR30310 AONR30310

AONR3031030V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 190A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:533K  1
 aonr32340c.pdf

AONR30310 AONR30310

AONR32340C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:371K  aosemi
 aonr36321.pdf

AONR30310 AONR30310

AONR3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:844K  aosemi
 aonr34332c.pdf

AONR30310 AONR30310

AONR34332C30V N-Channel MOSFETGeneral Description Product Summary Trench Power MOSFET technologyVDS30V Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)

 9.4. Size:431K  aosemi
 aonr36366.pdf

AONR30310 AONR30310

AONR3636630V N-Channel MOSFETGeneral Description Product Summary VDS Trench Power LV MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 34A Low Gate Charge RDS(ON) (at VGS=10V)

 9.5. Size:361K  aosemi
 aonr36368.pdf

AONR30310 AONR30310

AONR3636830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power LV MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

 9.6. Size:348K  aosemi
 aonr32314.pdf

AONR30310 AONR30310

AONR3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 17A High Current capability RDS(ON) (at VGS=10V)

 9.7. Size:354K  aosemi
 aonr32318.pdf

AONR30310 AONR30310

AONR3231830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 50A Optimized for load switch RDS(ON) (at VGS=10V)

 9.8. Size:755K  aosemi
 aonr36326c.pdf

AONR30310 AONR30310

AONR36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

 9.9. Size:547K  aosemi
 aonr36328.pdf

AONR30310 AONR30310

AONR3632830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)

 9.10. Size:401K  aosemi
 aonr36329.pdf

AONR30310 AONR30310

AONR3632930V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)

 9.11. Size:369K  aosemi
 aonr32320c.pdf

AONR30310 AONR30310

AONR32320C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top