Справочник MOSFET. AONR30310

 

AONR30310 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AONR30310
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 69 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 190 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 1580 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0012 Ohm
   Тип корпуса: DFN3.3X3.3-8L

 Аналог (замена) для AONR30310

 

 

AONR30310 Datasheet (PDF)

 ..1. Size:408K  aosemi
 aonr30310.pdf

AONR30310 AONR30310

AONR3031030V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 190A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:533K  1
 aonr32340c.pdf

AONR30310 AONR30310

AONR32340C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:371K  aosemi
 aonr36321.pdf

AONR30310 AONR30310

AONR3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:844K  aosemi
 aonr34332c.pdf

AONR30310 AONR30310

AONR34332C30V N-Channel MOSFETGeneral Description Product Summary Trench Power MOSFET technologyVDS30V Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)

 9.4. Size:431K  aosemi
 aonr36366.pdf

AONR30310 AONR30310

AONR3636630V N-Channel MOSFETGeneral Description Product Summary VDS Trench Power LV MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 34A Low Gate Charge RDS(ON) (at VGS=10V)

 9.5. Size:361K  aosemi
 aonr36368.pdf

AONR30310 AONR30310

AONR3636830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power LV MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

 9.6. Size:348K  aosemi
 aonr32314.pdf

AONR30310 AONR30310

AONR3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 17A High Current capability RDS(ON) (at VGS=10V)

 9.7. Size:354K  aosemi
 aonr32318.pdf

AONR30310 AONR30310

AONR3231830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 50A Optimized for load switch RDS(ON) (at VGS=10V)

 9.8. Size:755K  aosemi
 aonr36326c.pdf

AONR30310 AONR30310

AONR36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

 9.9. Size:547K  aosemi
 aonr36328.pdf

AONR30310 AONR30310

AONR3632830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)

 9.10. Size:401K  aosemi
 aonr36329.pdf

AONR30310 AONR30310

AONR3632930V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)

 9.11. Size:369K  aosemi
 aonr32320c.pdf

AONR30310 AONR30310

AONR32320C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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