AONR34332C MOSFET Datasheet: N-Ch, 30V, 100A. Full specification with pinout and replacement list

AONR34332C Specs and Replacement

Type Designator: AONR34332C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 1450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm

Package: DFN3.3X3.3-8L

AONR34332C substitution

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AONR34332C datasheet

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AONR34332C 30V N-Channel MOSFET General Description Product Summary Trench Power MOSFET technology VDS 30V Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONR32340C 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONR36321 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONR30310 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 190A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒