AONR34332C Datasheet and Replacement
Type Designator: AONR34332C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 1450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: DFN3.3X3.3-8L
AONR34332C substitution
AONR34332C Datasheet (PDF)
aonr34332c.pdf

AONR34332C30V N-Channel MOSFETGeneral Description Product Summary Trench Power MOSFET technologyVDS30V Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)
aonr32340c.pdf

AONR32340C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
aonr36321.pdf

AONR3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V)
aonr30310.pdf

AONR3031030V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 190A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AOCA35212E , AOC3860A , AOC3860C , AOCA33102E , AOCA36116C , AOCA32317 , AONR30310 , AONR32318 , IRF740 , AONR36321 , AONR62921 , AONR66820 , AONR66821 , AONR66922 , AONE38132 , AONP36332 , AONP36336 .
History: AO4264C | AOI600A70R
Keywords - AONR34332C MOSFET datasheet
AONR34332C cross reference
AONR34332C equivalent finder
AONR34332C lookup
AONR34332C substitution
AONR34332C replacement
History: AO4264C | AOI600A70R



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