All MOSFET. AONR34332C Datasheet

 

AONR34332C Datasheet and Replacement


   Type Designator: AONR34332C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 1450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: DFN3.3X3.3-8L
 

 AONR34332C substitution

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AONR34332C Datasheet (PDF)

 ..1. Size:844K  aosemi
 aonr34332c.pdf pdf_icon

AONR34332C

AONR34332C30V N-Channel MOSFETGeneral Description Product Summary Trench Power MOSFET technologyVDS30V Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:533K  1
 aonr32340c.pdf pdf_icon

AONR34332C

AONR32340C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:371K  aosemi
 aonr36321.pdf pdf_icon

AONR34332C

AONR3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:408K  aosemi
 aonr30310.pdf pdf_icon

AONR34332C

AONR3031030V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 190A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AOCA35212E , AOC3860A , AOC3860C , AOCA33102E , AOCA36116C , AOCA32317 , AONR30310 , AONR32318 , IRF740 , AONR36321 , AONR62921 , AONR66820 , AONR66821 , AONR66922 , AONE38132 , AONP36332 , AONP36336 .

History: 12P10L-TQ2-R | IXFT23N80Q | 14N50G-TF1-T | 10N65KL-TN3-R | CEN2321A | 14N50L-TA3-T | BRCS120P012MC

Keywords - AONR34332C MOSFET datasheet

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