AONR62921 MOSFET Datasheet: N-Ch, 100V, 50A. Full specification with pinout and replacement list

AONR62921 Specs and Replacement

Type Designator: AONR62921

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0102 Ohm

Package: DFN3.3X3.3-8L

AONR62921 substitution

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AONR62921 datasheet

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AONR62921 100V N-Channel MOSFET General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONR62992 100V N-Channel MOSFET General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONR62818 TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Best in Class Low RDS(ON) Low Switching Loss RDS(ON) (at VGS=10V) ... See More ⇒

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AONR66620 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V) ... See More ⇒