AONR62921 Datasheet and Replacement
Type Designator: AONR62921
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0102 Ohm
Package: DFN3.3X3.3-8L
AONR62921 substitution
AONR62921 Datasheet (PDF)
aonr62921.pdf

AONR62921100V N-Channel MOSFETGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aonr62818.pdf

AONR62818TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Best in Class Low RDS(ON) Low Switching Loss RDS(ON) (at VGS=10V)
aonr66620.pdf

AONR66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
aonr66821.pdf

AONR66821TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology 80V ID (at VGS=10V) 93A Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
Datasheet: AOC3860C , AOCA33102E , AOCA36116C , AOCA32317 , AONR30310 , AONR32318 , AONR34332C , AONR36321 , 20N60 , AONR66820 , AONR66821 , AONR66922 , AONE38132 , AONP36332 , AONP36336 , AONP36320 , AONP38324 .
History: HYG023N03LR1U
Keywords - AONR62921 MOSFET datasheet
AONR62921 cross reference
AONR62921 equivalent finder
AONR62921 lookup
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History: HYG023N03LR1U



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